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| MBRM3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features UNDER DEVELOPMENT NEW PRODUCT * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Reverse Breakdown Voltage For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 A P 3 E G POWERMITEa3 Dim A B C Min 4.03 6.40 Max 4.09 6.61 .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM Mechanical Data * * * * * * Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Marking: See Sheet 3 Weight: 0.072 grams (approx.) 1 2 B J H D E G H J M D C PIN 1 PIN 2 K C L PIN 3, BOTTOMSIDE HEAT SINK K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 90C Typical Thermal Resistance Junction to Soldering Point Typical Thermal Resistance Junction to Case Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS RqJC Tj TSTG Value 100 70 3 50 3.5 1.6 -55 to +125 -55 to +150 Unit V V A A C/W C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) @ TA = 25C unless otherwise specified Symbol V(BR)R VF Min 100 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.72 0.60 0.79 0.68 2 0.5 85 Max 3/4 0.76 3/4 3/4 3/4 100 20 3/4 Unit V V mA mA pF Test Condition IR = 0.2mA IF = 3A, Tj = 25C IF = 3A, Tj = 100C IF = 6A, Tj = 25C IF = 6A, Tj = 100C Tj = 25C, VR = 100V Tj = 100C, VR = 100V f = 1.0MHz, VR = 4.0V DC Reverse Current (Note 1) Total Capacitance Notes: IR CT 1. Short duration test pulse used to minimize self-heating effect. DS30354 Rev. 3 - 1 1 of 3 www.diodes.com MBRM3100 Tj = 100C IR, INSTANTANEOUS REVERSE CURRENT (m A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 10,000 NEW PRODUCT 1000 Tj = 125C 1.0 Tj = 25C Tj = 100C 100 0.1 Tj = 75C 10 Tj = 25C 0.01 0 0.2 0.4 0.6 0.8 1.0 1 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 1000 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 50 Single Half-Sine-Wave (JEDEC Method) f = 1MHz 40 TC = 90C 30 CT, TOTAL CAPACITANCE (pF) 100 20 10 10 0 1 10 100 0 20 40 60 80 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage UNDER DEVELOPMENT DS30354 Rev. 3 - 1 2 of 3 www.diodes.com MBRM3100 4 3.5 Note 1 3 2.5 Note 2 2 1.5 1 Note 3 0.5 0 25 125 75 100 50 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating 150 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 4 Tj = 125C 3 NOTE 2 NEW PRODUCT IF, DC FORWARD CURRENT (A) 2 1 NOTE 3 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation Ordering Information Device MBRM3100-13 Notes: (Note 4) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 1. TA = TSOLDERING POINT, RqJS = 3.5C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 25-45C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 105-130C/W. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM3100 YYWW(K) MBRM3100 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator UNDER DEVELOPMENT POWERMITE is a registered trademark of Microsemi Corporation. DS30354 Rev. 3 - 1 3 of 3 www.diodes.com MBRM3100 |
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